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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. KTC3535T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES Adoption of MBIT Processes. High Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall-Sized Package permitting applied sets to be made small and slim. High Allowable Power Dissipation. Complementary to KTA1535T C L G High Speed Switching. 1 E F G H I J K L H J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg RATING 20 20 5 3 5 600 0.9 150 -55 0.8 ) 150 UNIT V V V A mA W J 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=12V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=1.5A, IB=30mA IC=1.5A, IB=30mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, f=1MHz PW=20s DC < 1% = IB1 I B2 1k 50 VR 220F 470F VCC =5V RL MIN. 20 20 5 200 - OUTPUT Storage Time tstg Fall Time tf V BE =-5V 20IB1=-20IB2=IC =1.5A 2001. 6. 28 Revision No : 0 I TSM HD TYP. 120 0.85 180 30 30 MAX. 0.1 0.1 150 1.2 560 MHz pF UNIT A A V V V mV V - 210 - nS - 11 - 1/3 KTC3535T I C - V CE COLLECTOR CURRENT I C (A) 4 I C - V CE COLLECTOR CURRENT IC (A) 25mA 20mA 4 3 2 60 A 0m 40m A mA 5 5 4 25mA 20mA 15mA 15mA 10mA 5mA 3 10mA 2 5mA 1 0 1mA 2mA IB=0mA 1 0 1mA 2mA IB=0mA 0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C 1k DC CURRENT GAIN h FE 700 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 0.01 75 Ta= C VCE =2V IC /IB =20 CC 5 =2 -25 Ta Ta= 100 0.01 0.03 0.1 0.3 1 3 10 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 0.01 C 75 Ta= C 25 5 C Ta= a=-2 T VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 10 5 3 IC /IB =50 IC /IB =50 1 0.5 0.3 Ta=-25 C Ta=25 C Ta=75 C 0.03 0.1 0.3 1 3 10 0.1 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 2001. 6. 28 Revision No : 0 2/3 KTC3535T I C - V BE 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 VCE =2V fT - IC TRANSITION FREQUENCY f T (MHz) 1K 500 300 VCE =2V COLLECTOR CURRENT I C (A) Ta=2 5C Ta=-25 C Ta=7 5C 100 50 30 0.01 0.03 0.1 0.3 1 3 0 0.2 0.4 0.6 0.8 1.0 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (A) C ob - V CB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 100 70 50 30 f=1MHz SAFE OPERATING AREA 10 5 COLLECTOR CURRENT I C (A) 3 1 0.5 0.3 0.1 0.05 0.02 0.2 I C MAX (CONTINUOUS) I C MAX.(PULSED) 10 mS 50 S* 0 S 1m * * 10 DC OP ER A 0m S* TI ON 10 1 3 5 10 30 COLLECTOR-BASE VOLTAGE VCB (V) * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 1 3 10 20 COLLECTOR-EMITTER VOLTAGE VCE (V) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.0 MOUNTED ON A 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2001. 6. 28 Revision No : 0 3/3 This datasheet has been download from: www..com Datasheets for electronics components. |
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